The measurement of dislocation on InP wafers

We studied the effect of HCl, H 3 PO 4 , HBr etchants, temperature, illumination on the display of dislocation pits on <;100> InP single crystal wafers, and analyzed the effect of illumination, using the wet chemical etching method. The experimental results show that the etching rate is strong...

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Bibliographic Details
Published in2013 International Conference on Indium Phosphide and Related Materials (IPRM) pp. 1 - 2
Main Authors Qingfang Huang, Zhiguo Liu, Ruixia Yang, Xiaolan Li, Qiang Wang, Xiuwei Tian, Jianye Yang, Shuai Li
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2013
Subjects
Chemicals
Crystals
dislocation
Etching
Fuel processing industries
Indium phosphide
InP
Lighting
Substrates
wet chemical etching method
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Summary:We studied the effect of HCl, H 3 PO 4 , HBr etchants, temperature, illumination on the display of dislocation pits on <;100> InP single crystal wafers, and analyzed the effect of illumination, using the wet chemical etching method. The experimental results show that the etching rate is strongly dependent on the proportion of HBr in the mixed etchant and HBr alone can reveal dislocation pits on <;100> InP wafers. Both illumination and higher temperature can increase the etching rate. We also discuss the mechanism of different sizes of dislocation pits.
ISBN:9781467361309
1467361305
ISSN:1092-8669
DOI:10.1109/ICIPRM.2013.6562582