Impact of Ballast Resistor Implementations on Linearity and RF Performance of Common-Base SiGe Power HBTs

The influence of ballasting resistor implementations on the RF performance (both small-signal and large-signal) and on the linearity of common-base (CB) SiGe power HBTs is experimentally investigated. It is demonstrated that higher RF performance and better linearity can be achieved from CB SiGe HBT...

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Bibliographic Details
Published in2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems pp. 70 - 73
Main Authors Hui Li, Guoxuan Qin, Zhenqiang Ma, Pingxi Ma, Racanelli, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2008
Subjects
Electronic ballasts
Germanium silicon alloys
Heterojunction bipolar transistors
III-V semiconductor materials
Linearity
Radio frequency
Resistors
Silicon germanium
Substrates
Thermal conductivity
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Summary:The influence of ballasting resistor implementations on the RF performance (both small-signal and large-signal) and on the linearity of common-base (CB) SiGe power HBTs is experimentally investigated. It is demonstrated that higher RF performance and better linearity can be achieved from CB SiGe HBTs by using emitter ballasting scheme than using base ballasting scheme.
ISBN:9781424418558
1424418550
DOI:10.1109/SMIC.2008.24