Analog/RF wonderland: Circuit and technology co-optimization in advanced FinFET technology

Stacked-gate is one of the most popular solutions used in mismatch-sensitive circuits in FinFET technology. A Bandgap circuit using stacked-gate formed by 150 short-channel devices to achieve high accuracy is demonstrated. Adding uniform surrounding patterns to the target MOS array, the device misma...

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Bibliographic Details
Published in2016 IEEE Symposium on VLSI Technology pp. 1 - 2
Main Authors Fu-Lung Hsueh, Yung-Chow Peng, Chung-Hui Chen, Tzu-Jin Yeh, Hsieh-Hung Hsieh, Chin-Ho Chang, Szu-Lin Liu, Mei-Chen Chuang, Chen, Mark
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2016
Subjects
ADPLL
Analog circuits
bandgap
DGE
FinFETs
Layout
LNA
NTV
Photonic band gap
Radio frequency
VCO
Voltage-controlled oscillators
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Summary:Stacked-gate is one of the most popular solutions used in mismatch-sensitive circuits in FinFET technology. A Bandgap circuit using stacked-gate formed by 150 short-channel devices to achieve high accuracy is demonstrated. Adding uniform surrounding patterns to the target MOS array, the device mismatch caused by DGE (density gradient effect) can be cancelled. In low-power RF LNA and VCO, dc power reductions are achieved. The near-threshold-voltage (NTV) design technique is adopted for further 50% RF power reduction.
ISSN:2158-9682
DOI:10.1109/VLSIT.2016.7573399