Self-aligned ZnO nanoparticle-based TFTs for flexible electronics

In this study, we present an integration routine for self-aligned ZnO nanoparticle-based thin-film transistors (TFTs) to be implemented on flexible electronics. As a proof of concept, first experiments were performed on a borosilicate glass, and subsequently the integration process was carried out o...

Full description

Saved in:
Bibliographic Details
Published in2017 IEEE AFRICON pp. 644 - 648
Main Authors Vidor, F. F., Wirth, G. I., Meyers, T., Reker, J., Hilleringmann, U.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2017
Subjects
cost-efficient
Electrodes
flexible electronics
II-VI semiconductor materials
Logic gates
Nanoparticles
self-alignment process
Substrates
Thin film transistors
Zinc oxide
ZnO nanoparticles
Online AccessGet full text

Cover

More Information
Summary:In this study, we present an integration routine for self-aligned ZnO nanoparticle-based thin-film transistors (TFTs) to be implemented on flexible electronics. As a proof of concept, first experiments were performed on a borosilicate glass, and subsequently the integration process was carried out on a polyethylene terephthalate (PET) substrate. The TFTs operate at low voltage (V ON around 1 V) and depict I ON /I OFF in the range of 10 5 , field-effect mobility of about 1-2 cm 2 V -1 s -1 and subthreshold swing of about 0.6 V/dec. Aiming at a later high throughput process, spray-coating technique was employed for the deposition of the aqueous dispersion containing the ZnO nanoparticles. Moreover, a nanocomposite was used as high-Ä gate dielectric. In addition to the self-alignment process for the gate electrode, which drastically decreases gate parasitic capacitances, a similar method is also discussed for the patterning of the active semiconducting layer for the reduction of cross-talk effect.
ISSN:2153-0033
DOI:10.1109/AFRCON.2017.8095558