A novel bottom-up Ag contact (30nm diameter and 6.5 aspect ratio) technology by electroplating for 1Xnm and beyond technology

Very high 6.5 aspect ratio, 30nm diameter contacts are filled with a novel bottom-up Ag electroplating technology for the first time. The technology utilizes two distinct advantages of Ag over Cu: (1) Ag has the lower metal resistivity, and (2) Ag has several orders of magnitude lower diffusivity in...

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Bibliographic Details
Published in2011 International Electron Devices Meeting pp. 7.6.1 - 7.6.4
Main Authors Chao-An Jong, Po-Jung Sung, Mei-Yi Lee, Fu-Ju Hou, Kehuey Wu, Ying-Hao Su, Bing-Mau Chen, Chia-Wei Ho, Ren-Jei Chung, Yao-Jen Lee, Wen-Fa Wu, Chenming Hu, Fu-Liang Yang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2011
Subjects
Annealing
Copper
Resistance
Silicon
Surface treatment
Tin
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Summary:Very high 6.5 aspect ratio, 30nm diameter contacts are filled with a novel bottom-up Ag electroplating technology for the first time. The technology utilizes two distinct advantages of Ag over Cu: (1) Ag has the lower metal resistivity, and (2) Ag has several orders of magnitude lower diffusivity in Si than Cu. The bottom-up deposition technology intrinsically avoids the issue of seam formation arising from sidewall deposition, and thus is very promising" for future scaled contacts, even down to single digit nano-meter technology nodes.
ISBN:1457705060
9781457705069
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2011.6131509