Modelling the cauer thermal network for press pack IGBTs

Press Pack IGBTs (PP IGBTs) have gradually applied in the high voltage and high current areas, for their high power density, double side cooling and high reliability. The cauer thermal network model of PP IGBTs is proposed based on the boundary effect according to heat spreading angle in this paper,...

Full description

Saved in:
Bibliographic Details
Published in2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP) pp. 1 - 3
Main Authors Li, Jinyuan, Deng, Erping, Zhao, Zhibin, Zhang, Peng, Li, Yaosheng
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2017
Subjects
Finite element analysis
Heating systems
Insulated gate bipolar transistors
Reliability
Silicon
Thermal analysis
Thermal resistance
Online AccessGet full text

Cover

More Information
Summary:Press Pack IGBTs (PP IGBTs) have gradually applied in the high voltage and high current areas, for their high power density, double side cooling and high reliability. The cauer thermal network model of PP IGBTs is proposed based on the boundary effect according to heat spreading angle in this paper, and the difference between the IGBT and FRD chips is considered in this model. A finite element method (FEM) model is used to verify the accuracy of the cauer model because the accurate measurement of the junction to case thermal resistance of PP IGBTs is extremely difficult.
DOI:10.1109/APCAP.2017.8420843