Modelling the cauer thermal network for press pack IGBTs
Press Pack IGBTs (PP IGBTs) have gradually applied in the high voltage and high current areas, for their high power density, double side cooling and high reliability. The cauer thermal network model of PP IGBTs is proposed based on the boundary effect according to heat spreading angle in this paper,...
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Published in | 2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP) pp. 1 - 3 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.10.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Press Pack IGBTs (PP IGBTs) have gradually applied in the high voltage and high current areas, for their high power density, double side cooling and high reliability. The cauer thermal network model of PP IGBTs is proposed based on the boundary effect according to heat spreading angle in this paper, and the difference between the IGBT and FRD chips is considered in this model. A finite element method (FEM) model is used to verify the accuracy of the cauer model because the accurate measurement of the junction to case thermal resistance of PP IGBTs is extremely difficult. |
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DOI: | 10.1109/APCAP.2017.8420843 |