Time-differential sense amplifier for sub-80mV bitline voltage embedded STT-MRAM in 40nm CMOS

Spin-torque-transfer (STT) MRAM is a promising candidate for embedded non-volatile memory in next generation microcontrollers, because of superior endurance, low process costs and logic supply voltage operation. Two major drawbacks of STT-MRAM technology are the small read window because of the low...

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Bibliographic Details
Published in2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers pp. 216 - 217
Main Authors Jefremow, M., Kern, T., Allers, W., Peters, C., Otterstedt, J., Bahlous, O., Hofmann, K., Allinger, R., Kassenetter, S., Schmitt-Landsiedel, D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.02.2013
Subjects
Accuracy
Computer architecture
Electric potential
Logic gates
Sensors
Voltage control
Voltage measurement
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Summary:Spin-torque-transfer (STT) MRAM is a promising candidate for embedded non-volatile memory in next generation microcontrollers, because of superior endurance, low process costs and logic supply voltage operation. Two major drawbacks of STT-MRAM technology are the small read window because of the low tunnel magnetic resistance (TMR) ratio, and the low read current due to read disturb, which is proportional to the bitline (BL) voltage [1].
ISBN:9781467345156
1467345156
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2013.6487706