High-speed pulse response of asymmetric-dual-grating-gate high-electron-mobility-transistor for plasmonic THz detection

Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for on-chip, sensitive, room-temperature operating, high-speed THz detectors. In this paper, we experimentally verify the high-speed response of an ADGG-HEMT by measuring its response to THz pulse generated fro...

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Bibliographic Details
Published in2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors Hosotani, T., Kasuya, F., Suzuki, M., Suemitsu, T., Otsuji, T., Takida, Y., Ito, H., Minamide, H., Ishibashi, T., Shimizu, M., Satou, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2017
Subjects
Detectors
HEMTs
Plasmons
Pulse measurements
Semiconductor device measurement
Temperature measurement
Wireless communication
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Summary:Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for on-chip, sensitive, room-temperature operating, high-speed THz detectors. In this paper, we experimentally verify the high-speed response of an ADGG-HEMT by measuring its response to THz pulse generated from an injection-seeded THz-wave parametric generator (is-TPG). From the pulse response waveform of the output photovoltage signal, it is demonstrated that the response time of the detector at least as fast as 100 ps.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz.2017.8066947