Influence of fin-width lateral variations of a FinFET

We have presented that, in terms of subthreshold operation, I OFF , SS and DIBL are improved in response to higher degree of lateral thickness non-uniformity. We have shown that the linearly varying film thickness of a FinFET introduces effects comparable to small variations in overall thickness. To...

Full description

Saved in:
Bibliographic Details
Published inProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) pp. 1 - 2
Main Authors Prawoto, Clarissa C., Cheralathan, Muthupandian, Mansun Chan
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2014
Subjects
Educational institutions
Electric potential
FinFETs
Geometry
Logic gates
Performance evaluation
Online AccessGet full text

Cover

More Information
Summary:We have presented that, in terms of subthreshold operation, I OFF , SS and DIBL are improved in response to higher degree of lateral thickness non-uniformity. We have shown that the linearly varying film thickness of a FinFET introduces effects comparable to small variations in overall thickness. To address the non-uniformity, a correction factor for the overall thickness based on I OFF could be employed. Due to its non-trivial effects, this thickness variation angle should be considered as a parameter in FinFET modeling in order to capture a more accurate behavior, instead of only taking the average thickness.
ISSN:1524-766X
2690-8174
DOI:10.1109/VLSI-TSA.2014.6839651