Influence of fluorine contamination on semiconductor wafer probing

Probing over active area (POAA) is gaining more influence in modern semiconductor production. Because of the existing bonding technology aluminum is still used as last metal layer. Whereas it is assumed that the problems during probing are mainly caused by the native aluminum oxide on the pad surfac...

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Bibliographic Details
Published in2008 26th International Conference on Microelectronics pp. 283 - 286
Main Authors Reinl, M., Stimpel-Lindner, T., Sulima, T., Eisele, I., Nagler, O., Kaesen, F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
Aluminum oxide
Contacts
Contamination
Electric variables measurement
Force measurement
Force sensors
Gold
Plasma measurements
Pollution measurement
Production
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Summary:Probing over active area (POAA) is gaining more influence in modern semiconductor production. Because of the existing bonding technology aluminum is still used as last metal layer. Whereas it is assumed that the problems during probing are mainly caused by the native aluminum oxide on the pad surface we will show, that other contaminations must be considered as well, especially fluorine. A possible cleaning step to improve the probing performance will be shown and discussed.
ISBN:9781424418817
142441881X
DOI:10.1109/ICMEL.2008.4559279