Characterization of β-Ga2O3 interface and conduction band offset with GaN using a Sol-gel process of deposition

Significant efforts have been reported on oxide dielectrics on GaN and their role on device performance. It has been noted by several researchers that a few monolayers of native Ga 2 O 3 decorate the GaN surface due to the spontaneous termination of the Ga-atoms with Oxygen. In an attempt to charact...

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Published in2017 75th Annual Device Research Conference (DRC) pp. 1 - 2
Main Authors Jianyi Gao, Kaya, Ahmet, Chopdekar, Rajesh V., Dryden, Daniel M., Takamura, Yayoi, Islam, M. Saif, Chowdhury, Srabanti
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2017
Subjects
Capacitance-voltage characteristics
Current measurement
Gallium nitride
MOS capacitors
Schottky diodes
Temperature measurement
Tunneling
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Summary:Significant efforts have been reported on oxide dielectrics on GaN and their role on device performance. It has been noted by several researchers that a few monolayers of native Ga 2 O 3 decorate the GaN surface due to the spontaneous termination of the Ga-atoms with Oxygen. In an attempt to characterize the quality of Ga 2 O 3 and GaN interfaces and evaluate its band offset on GaN, we have successfully deposited Ga 2 O 3 on GaN using a sol-gel process developed by Kaya et al. In this work, we report successful deposition of the sol-gel process enabled thin-film of Ga 2 O 3 on n-type GaN with the assistance of photochemical reaction involving the exposure to the UV light. Interface-state density and conduction band offset between Ga 2 O 3 and GaN were characterized on Au/Al/Ga 2 O 3 /GaN MOS capacitors.
DOI:10.1109/DRC.2017.7999447