First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack

We demonstrate, for the first time, the negative capacitance (NC) In 0.53 Ga 0.47 As nMOSFET with 8-nm Hf 0.5 Zr 0.5 O 2 (HZO) as ferroelectric (FE) dielectric for sub-60 mV/dec subthreshold swing (SS). The impact of annealing treatments on the FE properties and electrical characteristics of NC InGa...

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Published in2018 IEEE Symposium on VLSI Technology pp. 47 - 48
Main Authors Luc, Q. H., Fan-Chiang, C. C., Huynh, S. H., Huang, P., Do, H. B., Ha, M. T. H., Jin, Y. D., Nguyen, T. A., Zhang, K. Y., Wang, H. C., Lin, Y. K., Lin, Y. C., Hu, C., Iwai, H., Chang, E. Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
Annealing
Indium gallium arsenide
Iron
Logic gates
MOSFET
MOSFET circuits
Silicon
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ISSN2158-9682
DOI10.1109/VLSIT.2018.8510644

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Summary:We demonstrate, for the first time, the negative capacitance (NC) In 0.53 Ga 0.47 As nMOSFET with 8-nm Hf 0.5 Zr 0.5 O 2 (HZO) as ferroelectric (FE) dielectric for sub-60 mV/dec subthreshold swing (SS). The impact of annealing treatments on the FE properties and electrical characteristics of NC InGaAs nMOSFETs are investigated. Optimized annealing condition results in NC effects at the HZO/Al 2 O 3 /InGaAs nMOSFETs with steep SS property (~ 11 mV/dec).
ISSN:2158-9682
DOI:10.1109/VLSIT.2018.8510644