MM-wave noise characterization of 40nm CMOS transistor for up to 67 GHz

This noise modelling, characterization and measurement from 0.5 GHz to 67 GHz is reported for the first time in coaxial. RF CMOS devices fabricated on GLOBALFOUNDRIES' 40nm technology are measured with Focus Microwaves noise system for full frequency span of 67 GHz. Experimental results agree w...

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Bibliographic Details
Published in2014 IEEE Radio Frequency Integrated Circuits Symposium pp. 191 - 194
Main Authors Xi Sung Loo, Nguyen, Hoang V., Zhihong Liu, Chew, Johnny Kok Wai, Misljenovic, Neven, Hosein, Bryan, Tsironis, Christos, Jen Shuang Wong, Wai Heng Chow
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
CMOS integrated circuits
CMOS technology
Frequency measurement
millimeter wave transistors
Noise
Noise figure
noise measurement
Semiconductor device modeling
thermal noise
Transistors
tuners
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Summary:This noise modelling, characterization and measurement from 0.5 GHz to 67 GHz is reported for the first time in coaxial. RF CMOS devices fabricated on GLOBALFOUNDRIES' 40nm technology are measured with Focus Microwaves noise system for full frequency span of 67 GHz. Experimental results agree well with theoretical and modeling results.
ISBN:1479938629
9781479938629
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2014.6851694