High power 625-nm AlGaInP laser diode

This paper presents high power AlGalnP LD with lasing wavelength of 625 nm. High power 625-nm AlGalnP laser diode was fabricated and evaluated. Remarkable short wavelength lasing at 624.9 nm was achieved on the condition of T c = 25°C and 50 mW output under CW operation. At injection current of 800...

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Bibliographic Details
Published in22nd IEEE International Semiconductor Laser Conference pp. 150 - 151
Main Authors Shimada, N, Ohno, A, Abe, S, Miyashita, M, Yagi, T
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2010
Subjects
Color
Diode lasers
Gallium arsenide
Power systems
Semiconductor laser arrays
Temperature
Temperature measurement
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Summary:This paper presents high power AlGalnP LD with lasing wavelength of 625 nm. High power 625-nm AlGalnP laser diode was fabricated and evaluated. Remarkable short wavelength lasing at 624.9 nm was achieved on the condition of T c = 25°C and 50 mW output under CW operation. At injection current of 800 mA, a high output power of 220 mW was obtained.
ISBN:9781424456833
1424456835
ISSN:0899-9406
1947-6981
DOI:10.1109/ISLC.2010.5642708