Predicting IGBT Junction Temperature with Thermal Network Component Model

As the operation performances and reliability of semiconductor devices are tightly related to its junction temperature, the research on the junction temperature prediction and thermal modeling do a significant meaning to extend services lifetime and improve application reliability of the IGBT module...

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Bibliographic Details
Published in2011 Asia-Pacific Power and Energy Engineering Conference pp. 1 - 4
Main Authors Ming Chen, An Hu, Xidang Yang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2011
Subjects
Impedance
Insulated gate bipolar transistors
Junctions
Temperature measurement
Thermal resistance
Transient analysis
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Summary:As the operation performances and reliability of semiconductor devices are tightly related to its junction temperature, the research on the junction temperature prediction and thermal modeling do a significant meaning to extend services lifetime and improve application reliability of the IGBT modules. The physical structure and conception, RC thermal compact network component model, test principle and extraction platform of the transient thermal impedance of IGBT module are briefly introduced. The parameters of RC Foster thermal network of a certain type IGBT is derived based on the junction-to-case transient thermal impedance curve. With the thermal compact network component model, the transient junction temperature can be predicted. The simulation results show that the method of predicting the junction temperature with thermal network model is effective.
ISBN:9781424462537
1424462533
ISSN:2157-4839
DOI:10.1109/APPEEC.2011.5749030