Large signal HBT model with measurement based charge formulations

A new large signal HBT model is proposed and experimentally evaluated, which contains measurement based diffusion charge and analytical depletion capacitance formulations. In order to account for the complicated dependency of diffusion charge on bias, transit times at various bias points are extract...

Full description

Saved in:
Bibliographic Details
Published inIEEE MTT-S International Microwave Symposium Digest, 2005 pp. 1167 - 1170
Main Authors Sanghoon Cheon, Jiyoun Lim, Deoksoo Park, Jae-Woo Park
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Capacitance measurement
Charge measurement
Current measurement
Data mining
Gallium arsenide
Heterojunction bipolar transistors
Interpolation
Radio frequency
Signal analysis
Spline
Online AccessGet full text

Cover

More Information
Summary:A new large signal HBT model is proposed and experimentally evaluated, which contains measurement based diffusion charge and analytical depletion capacitance formulations. In order to account for the complicated dependency of diffusion charge on bias, transit times at various bias points are extracted from measured data and contourintegrated. Using spline functions in the interpolation of transit times, modeled RF characteristics are continuous and smooth up to 3rd order derivative with respect to collector current in the wide range of bias. Base-Emitter depletion capacitance Cbe is implemented considering GaAs emitter capping layer as well as InGaP emitter layer. It is shown that the new formulations of diffusion charge and depletion capacitor improves the accuracy of the large-signal model. Simulation results are verified with comparison to measured S-parameter and gain characteristics in the whole bias range.
ISBN:9780780388451
0780388453
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2005.1516883