Analysis and modeling of LNA circuit reliability

This paper systematically investigates the hot carrier (HC) and soft breakdown (SBD) effects on different low noise amplifier (LNA) circuit configurations. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally evaluated, the HC and SBD induced performance deg...

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Bibliographic Details
Published in2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers pp. 69 - 72
Main Authors Enjun Xiao, Peiqing Zhu, Yuan, J.S., Chuanzhao Yu
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Bluetooth
Circuit noise
CMOS technology
Degradation
Electric breakdown
Hot carriers
Low-noise amplifiers
MOSFET circuits
Radio frequency
Radiofrequency amplifiers
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Summary:This paper systematically investigates the hot carrier (HC) and soft breakdown (SBD) effects on different low noise amplifier (LNA) circuit configurations. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally evaluated, the HC and SBD induced performance degradations of three LNA configurations are evaluated for 0.16 /spl mu/m CMOS technology. The applications include Bluetooth and wireless LAN systems. The analytical equations for noise figure are derived, and the degradation models are also obtained. This work can help LNA designers to design more reliable LNA circuits.
ISBN:9780780389830
0780389832
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2005.1489499