A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

In this paper, we present a novel compact DC-DC converter IC in which normally-off GaN-GITs (Gate Injection Transistors) and gate drivers are integrated into one chip. The DC-DC converter IC can achieve higher efficiency and smaller chip size by reducing parasitic inductances between switching power...

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Bibliographic Details
Published in2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 51 - 54
Main Authors Ujita, Shinji, Kinoshita, Yusuke, Umeda, Hidekazu, Morita, Tatsuo, Tamura, Satoshi, Ishida, Masahiro, Ueda, Tetsuzo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Gallium nitride
HEMTs
Integrated circuits
Logic gates
MODFETs
Switches
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Summary:In this paper, we present a novel compact DC-DC converter IC in which normally-off GaN-GITs (Gate Injection Transistors) and gate drivers are integrated into one chip. The DC-DC converter IC can achieve higher efficiency and smaller chip size by reducing parasitic inductances between switching power devices and gate drivers. The gate driver, having a DCFL (Direct Coupled FET Logic) with a buffer amplifier which is consisted of a GaN-HFET (Hetero-junction FET) and GaN-GITs can operate with higher speed and lower power consumption. The fabricated DC-DC converter IC exhibits a peak efficiency as high as 86.6% at 2MHz for the 12V-1.8V conversion.
ISBN:9781479929177
1479929174
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2014.6855973