A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

In this paper, we present a novel compact DC-DC converter IC in which normally-off GaN-GITs (Gate Injection Transistors) and gate drivers are integrated into one chip. The DC-DC converter IC can achieve higher efficiency and smaller chip size by reducing parasitic inductances between switching power...

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Bibliographic Details
Published in2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 51 - 54
Main Authors Ujita, Shinji, Kinoshita, Yusuke, Umeda, Hidekazu, Morita, Tatsuo, Tamura, Satoshi, Ishida, Masahiro, Ueda, Tetsuzo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
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Summary:In this paper, we present a novel compact DC-DC converter IC in which normally-off GaN-GITs (Gate Injection Transistors) and gate drivers are integrated into one chip. The DC-DC converter IC can achieve higher efficiency and smaller chip size by reducing parasitic inductances between switching power devices and gate drivers. The gate driver, having a DCFL (Direct Coupled FET Logic) with a buffer amplifier which is consisted of a GaN-HFET (Hetero-junction FET) and GaN-GITs can operate with higher speed and lower power consumption. The fabricated DC-DC converter IC exhibits a peak efficiency as high as 86.6% at 2MHz for the 12V-1.8V conversion.
ISBN:9781479929177
1479929174
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2014.6855973