Analysis and modeling of DMOS FBSOA limited by n-p-n leakage diffusion current

Failure of DMOS self-heated in saturation below the avalanche threshold is usually related to an activation of the parasitic n-p-n transistor. In this work we show that the exponential increase of the leakage diffusion current of the n-p-n is sufficient to cause thermal runaway, even for a slightly...

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Published inProceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005 pp. 331 - 334
Main Authors Denison, M., Pfost, M., Stecher, M., Silber, D.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Alternators
Automotive applications
Batteries
Charge carrier processes
Manifolds
MOSFETs
Temperature distribution
Threshold voltage
Vehicle dynamics
Voltage control
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Summary:Failure of DMOS self-heated in saturation below the avalanche threshold is usually related to an activation of the parasitic n-p-n transistor. In this work we show that the exponential increase of the leakage diffusion current of the n-p-n is sufficient to cause thermal runaway, even for a slightly reverse body-source bias caused by the internal ballasting source resistance. Adding this current contribution to a basic DMOS compact model allows simulating the thermal limit of large DMOS transistors considered as distributed electrothermal networks. To our knowledge it is the first report of a quantitative DMOS FBSOA model accounting for the instabilities driven by the temperature dependences of both MOS and n-p-n components
ISBN:0780388909
9780780388901
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2005.1488018