Epitaxial wafer quality versus substrate quality

The effect of various InP substrates properties on epitaxial layer quality was investigated. From the results of experiments on MOCVD, we found that the average haze of epitaxial layer surfaces measured by surfscan can be reduced by using substrates with optimum surface mis-orientation angles of 0.0...

Full description

Saved in:
Bibliographic Details
Published inInternational Conference on Indium Phosphide and Related Materials, 2005 pp. 231 - 232
Main Authors Suzuki, K., Noda, A., Nakamura, M., Kawabe, M., Akamatsu, K., Kurita, H., Hirano, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Epitaxial growth
Epitaxial layers
Indium phosphide
MOCVD
Molecular beam epitaxial growth
Rough surfaces
Substrates
Surface morphology
Surface roughness
Surface treatment
Online AccessGet full text

Cover

More Information
Summary:The effect of various InP substrates properties on epitaxial layer quality was investigated. From the results of experiments on MOCVD, we found that the average haze of epitaxial layer surfaces measured by surfscan can be reduced by using substrates with optimum surface mis-orientation angles of 0.05-0.10 degrees. Our experiments on MBE also showed a similar tendency. Furthermore it was found that appropriate treatment of substrates prevents slips on the periphery of epitaxial wafers.
ISBN:9780780388918
0780388917
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517464