A 1.2V and Low Temperature Coefficient 9.106 ppm/°C with Low Voltage Fully MOS Sub-BGR Compensation Circuitry
This paper presents an improved version of BGR circuit using compensation circuitries. The proposed BGR circuit is designed with CMOS 1.8 μm technology over temperature range of -50 °C to 150 °C at 1.8 V supply voltage. A temperature coefficient of 9.106 ppm/°C with a voltage variation of 1 mV is ob...
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Published in | 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) pp. 180 - 183 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.08.2019
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Abstract | This paper presents an improved version of BGR circuit using compensation circuitries. The proposed BGR circuit is designed with CMOS 1.8 μm technology over temperature range of -50 °C to 150 °C at 1.8 V supply voltage. A temperature coefficient of 9.106 ppm/°C with a voltage variation of 1 mV is obtained. The circuit attained a line regulation of 0.022% at 27 °C. The measured PSRR is -69.86 dB at frequency less than 10 kHz. The PSRR decreased from -70 dB to -54 dB when the frequency increased to 1 MHz from 10 kHz. The performance of proposed BGR circuit is also evaluated by using Monte Carlo analysis and process corners simulation. A total variation of mean reference voltage of 0.008 mV is achieved from 1.8 V to 3.3 V in Monte Carlo analysis. Based on process corner analysis, the proposed BGR circuit able to generate a constant reference voltage at different process corners when the voltage is higher than 1.2 V. Overall, the proposed BGR circuit achieved the targeted low voltage variation, low temperature coefficient at wide range of temperature. |
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AbstractList | This paper presents an improved version of BGR circuit using compensation circuitries. The proposed BGR circuit is designed with CMOS 1.8 μm technology over temperature range of -50 °C to 150 °C at 1.8 V supply voltage. A temperature coefficient of 9.106 ppm/°C with a voltage variation of 1 mV is obtained. The circuit attained a line regulation of 0.022% at 27 °C. The measured PSRR is -69.86 dB at frequency less than 10 kHz. The PSRR decreased from -70 dB to -54 dB when the frequency increased to 1 MHz from 10 kHz. The performance of proposed BGR circuit is also evaluated by using Monte Carlo analysis and process corners simulation. A total variation of mean reference voltage of 0.008 mV is achieved from 1.8 V to 3.3 V in Monte Carlo analysis. Based on process corner analysis, the proposed BGR circuit able to generate a constant reference voltage at different process corners when the voltage is higher than 1.2 V. Overall, the proposed BGR circuit achieved the targeted low voltage variation, low temperature coefficient at wide range of temperature. |
Author | Rhaffor, Nuha A. Manaf, Asrulnizam Abd Hamid, Sofiyah Sal |
Author_xml | – sequence: 1 givenname: Sofiyah Sal surname: Hamid fullname: Hamid, Sofiyah Sal organization: Collaborative Microelectronic Design Excellence Centre, Universiti Sains Malaysia,Bayan Lepas,Penang,Malaysia – sequence: 2 givenname: Nuha A. surname: Rhaffor fullname: Rhaffor, Nuha A. organization: Collaborative Microelectronic Design Excellence Centre, Universiti Sains Malaysia,Bayan Lepas,Penang,Malaysia – sequence: 3 givenname: Asrulnizam Abd surname: Manaf fullname: Manaf, Asrulnizam Abd organization: Collaborative Microelectronic Design Excellence Centre, Universiti Sains Malaysia,Bayan Lepas,Penang,Malaysia |
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Snippet | This paper presents an improved version of BGR circuit using compensation circuitries. The proposed BGR circuit is designed with CMOS 1.8 μm technology over... |
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SubjectTerms | compensation circuitry Germanium Hafnium low voltage MOS temperature coefficient |
Title | A 1.2V and Low Temperature Coefficient 9.106 ppm/°C with Low Voltage Fully MOS Sub-BGR Compensation Circuitry |
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