A 1.2V and Low Temperature Coefficient 9.106 ppm/°C with Low Voltage Fully MOS Sub-BGR Compensation Circuitry

• Published in: 2019 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) pp. 180 - 183
• Main Authors: Hamid, Sofiyah Sal, Rhaffor, Nuha A., Manaf, Asrulnizam Abd
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.08.2019
• Subjects: compensation circuitry; Germanium; Hafnium; low voltage; MOS; temperature coefficient
• ISSN: 2639-4642
• DOI: 10.1109/RSM46715.2019.8943567

This paper presents an improved version of BGR circuit using compensation circuitries. The proposed BGR circuit is designed with CMOS 1.8 μm technology over temperature range of -50 °C to 150 °C at 1.8 V supply voltage. A temperature coefficient of 9.106 ppm/°C with a voltage variation of 1 mV is obtained. The circuit attained a line regulation of 0.022% at 27 °C. The measured PSRR is -69.86 dB at frequency less than 10 kHz. The PSRR decreased from -70 dB to -54 dB when the frequency increased to 1 MHz from 10 kHz. The performance of proposed BGR circuit is also evaluated by using Monte Carlo analysis and process corners simulation. A total variation of mean reference voltage of 0.008 mV is achieved from 1.8 V to 3.3 V in Monte Carlo analysis. Based on process corner analysis, the proposed BGR circuit able to generate a constant reference voltage at different process corners when the voltage is higher than 1.2 V. Overall, the proposed BGR circuit achieved the targeted low voltage variation, low temperature coefficient at wide range of temperature.