A Monte Carlo simulator including generation recombination processes

We present an advanced Monte Carlo code (SIHOLE90) which is applied to p-Si and includes generation recombination processes from shallow impurity levels, impact ionization from neutral impurities and the Poole-Frenkel effect. The very good agreement obtained between calculations and experiments supp...

Full description

Saved in:
Bibliographic Details
Published inESSDERC '90: 20th European Solid State Device Research Conference pp. 489 - 492
Main Authors Reggiani, Lino, Kuhn, Tilmann, Varani, Luca, Gasquet, Daniel, Vaissiere, Jean Claude, Nougier, Jean Pierre
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.1990
Subjects
Conductivity
Electron mobility
Hot carriers
Impurities
Light scattering
Monte Carlo methods
Optical scattering
Radiative recombination
Reliability theory
Semiconductor device reliability
Online AccessGet full text

Cover

More Information
Summary:We present an advanced Monte Carlo code (SIHOLE90) which is applied to p-Si and includes generation recombination processes from shallow impurity levels, impact ionization from neutral impurities and the Poole-Frenkel effect. The very good agreement obtained between calculations and experiments supports the physical reliability of the code which should provide useful information for device modeling.
ISBN:9780750300650
0750300655