Compact High-Efficiency High-Power Wideband GaN Amplifier Supporting 395 MHz Instantaneous Bandwidth

A compact, pre-matched gallium-nitride (GaN) device is proposed to support high power, high efficiency, concurrent multiband amplifier applications. Novel in-package matching networks addressing both the input and output of high power GaN active devices are considered. As proof-of-concept, a symmetr...

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Bibliographic Details
Published in2019 IEEE MTT-S International Microwave Symposium (IMS) pp. 1175 - 1178
Main Authors Ning Zhu, McLaren, Roy, Roberts, Jeffrey S., Holmes, Damon G., Masood, Mir, Jones, Jeffrey K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2019
Subjects
Baseband
baseband impedance
Doherty power amplifier
Gallium nitride
GaN
Impedance
instantaneous bandwidth
multi-band
Power amplifiers
Power generation
Wideband
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Summary:A compact, pre-matched gallium-nitride (GaN) device is proposed to support high power, high efficiency, concurrent multiband amplifier applications. Novel in-package matching networks addressing both the input and output of high power GaN active devices are considered. As proof-of-concept, a symmetric Doherty power amplifier (PA) with 55.3 dBm (340 W) peak power is demonstrated to achieve 20% fractional RF bandwidth from 1.805 - 2.2 GHz with high efficiency and low baseband impedance. With digital-predistortion (DPD) compensation, the amplifier achieves 48% drain efficiency at average output power of 48.8 dBm, and ACPR better than -52 dBc during concurrent transmission of signals with 395 MHz instantaneous signal bandwidth (ISBW). The results represent the highest linearized efficiency reported for concurrent 3GPP Band 3 and Band 66 multiband scenarios for high power infrastructure PA applications.
ISSN:2576-7216
DOI:10.1109/MWSYM.2019.8700873