Nanosecond Laser Anneal for BEOL Performance Boost in Advanced FinFETs

Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 - 5% in I Dsat . Additionally, reliability was enhanced with an...

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Published in2018 IEEE Symposium on VLSI Technology pp. 61 - 62
Main Authors Lee, Rinus T.P., Petrov, N., Kassim, J., Gribelyuk, M., Yang, J., Cao, L., Yeap, K.B., Shen, T., Zainuddin, A. N., Chandrashekar, A., Ray, S., Ramanathan, E., Mahalingam, A. S., Chaudhuri, R., Mody, J., Damjanovic, D., Sun, Z., Sporer, R., Tang, T. J., Liu, H., Liu, J., Krishnan, B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
Annealing
Capacitance
Integrated circuit interconnections
Lasers
Measurement by laser beam
Performance evaluation
Resistance
Online AccessGet full text
ISSN2158-9682
DOI10.1109/VLSIT.2018.8510651

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Abstract Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 - 5% in I Dsat . Additionally, reliability was enhanced with an improvement in dielectric VBD and Cu EM performance without impacting the ULK mechanical integrity. Our results demonstrate a path to extending Cu interconnects for performance boost in 14nm FinFETs and beyond.
AbstractList Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 - 5% in I Dsat . Additionally, reliability was enhanced with an improvement in dielectric VBD and Cu EM performance without impacting the ULK mechanical integrity. Our results demonstrate a path to extending Cu interconnects for performance boost in 14nm FinFETs and beyond.
Author Sporer, R.
Yang, J.
Ramanathan, E.
Mahalingam, A. S.
Shen, T.
Lee, Rinus T.P.
Damjanovic, D.
Petrov, N.
Yeap, K.B.
Tang, T. J.
Gribelyuk, M.
Krishnan, B.
Kassim, J.
Chandrashekar, A.
Liu, H.
Sun, Z.
Ray, S.
Liu, J.
Zainuddin, A. N.
Chaudhuri, R.
Cao, L.
Mody, J.
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Snippet Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu...
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StartPage 61
SubjectTerms Annealing
Capacitance
Integrated circuit interconnections
Lasers
Measurement by laser beam
Performance evaluation
Resistance
Title Nanosecond Laser Anneal for BEOL Performance Boost in Advanced FinFETs
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