Nanosecond Laser Anneal for BEOL Performance Boost in Advanced FinFETs

Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 - 5% in I Dsat . Additionally, reliability was enhanced with an...

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Bibliographic Details
Published in2018 IEEE Symposium on VLSI Technology pp. 61 - 62
Main Authors Lee, Rinus T.P., Petrov, N., Kassim, J., Gribelyuk, M., Yang, J., Cao, L., Yeap, K.B., Shen, T., Zainuddin, A. N., Chandrashekar, A., Ray, S., Ramanathan, E., Mahalingam, A. S., Chaudhuri, R., Mody, J., Damjanovic, D., Sun, Z., Sporer, R., Tang, T. J., Liu, H., Liu, J., Krishnan, B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
Annealing
Capacitance
Integrated circuit interconnections
Lasers
Measurement by laser beam
Performance evaluation
Resistance
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ISSN2158-9682
DOI10.1109/VLSIT.2018.8510651

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Summary:Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 - 5% in I Dsat . Additionally, reliability was enhanced with an improvement in dielectric VBD and Cu EM performance without impacting the ULK mechanical integrity. Our results demonstrate a path to extending Cu interconnects for performance boost in 14nm FinFETs and beyond.
ISSN:2158-9682
DOI:10.1109/VLSIT.2018.8510651