Impact of data center cooling strategies on component reliability
In a data center environment, the temperature that a chip experiences is an important parameter determining its reliability. A high operating temperature can cause it to wearout prematurely. A low temperature results in additional cooling costs to operate the data center. In typical data center oper...
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Published in | 2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) pp. 197 - 201 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.03.2014
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Subjects | |
Online Access | Get full text |
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Summary: | In a data center environment, the temperature that a chip experiences is an important parameter determining its reliability. A high operating temperature can cause it to wearout prematurely. A low temperature results in additional cooling costs to operate the data center. In typical data center operation, there arises a distribution of component temperatures that are sensitive to the specific cooling strategies being used. This paper evaluates the impact of various data center cooling strategies on component reliability focusing on the gate oxide time dependent dielectric breakdown (TDDB) mechanism on a 32nm chipset component. |
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ISSN: | 1065-2221 2577-1000 |
DOI: | 10.1109/SEMI-THERM.2014.6892239 |