Controlled Self-formation of GaN Nanotubes by Inductively Coupled Plasmas Etching

In this work, we fabricated GaN hollow nanorods by using inductively coupled plasma (ICP) etching. We found that tops of these nanotubes were hexagonal with the c-axis perpendicular to substrate surface. We also found that density of the GaN nanorods were not strongly dependent on etching parameters...

Full description

Saved in:
Bibliographic Details
Published in2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems pp. 1392 - 1395
Main Authors Hung, S.C., Su, Y.K., Chang, S.J., Liang, T.C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2006
Subjects
Conducting materials
Epitaxial layers
FESEM
Gallium nitride
GaN
HRSEM
ICP
Lithography
Nanotubes
Nuclear and plasma sciences
Optical materials
Plasma applications
RIE
Sputter etching
Thermal conductivity
Online AccessGet full text

Cover

More Information
Summary:In this work, we fabricated GaN hollow nanorods by using inductively coupled plasma (ICP) etching. We found that tops of these nanotubes were hexagonal with the c-axis perpendicular to substrate surface. We also found that density of the GaN nanorods were not strongly dependent on etching parameters, which suggests that the formation of these GaN nanotubes was related to the dislocation density in the original GaN epitaxial layers. Furthermore, it was found that we could reduce the dimension and increase the density of the GaN nanotubes by decreasing the Ar concentrations during ICP etching
ISBN:1424401399
9781424401390
DOI:10.1109/NEMS.2006.334773