Subband representation in atomistic transport simulation of nanowire transistors

We construct a low-dimensional representation of a tight-binding model to be used in the self-consistent device simulation. The method combines the original atomic orbitals of the nanowire device into a small basis set which reproduces the band structure and all the relevant electronic states. The b...

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Bibliographic Details
Published in2010 14th International Workshop on Computational Electronics pp. 1 - 4
Main Authors Mil'nikov, G V, Mori, N, Kamakura, Y, Minari, H
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2010
Subjects
Computational modeling
Green's function methods
Integrated circuit modeling
Numerical models
Scattering
Silicon
Wires
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Summary:We construct a low-dimensional representation of a tight-binding model to be used in the self-consistent device simulation. The method combines the original atomic orbitals of the nanowire device into a small basis set which reproduces the band structure and all the relevant electronic states. The basis representation greatly reduces the numerical burden and makes it possible to incorporate non-elastic scattering into atomistic transport simulations.
ISBN:9781424493838
1424493838
DOI:10.1109/IWCE.2010.5677962