Measurement method for transient programming current of 1T1R phase-change memory

This paper presents a measurement method for 1 transistor-1 resistance (1T1R), phase-change memory (PCM) devices. We fabricated a novel PCM test structure with an internal voltage measurement point, and we monitored the voltage drop between 1T and 1R. The voltage drop was accurately converted to the...

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Bibliographic Details
Published in2006 IEEE International Conference on Microelectronic Test Structures pp. 43 - 46
Main Authors Kurotsuchi, K., Takaura, N., Matsuzaki, N., Matsui, Y., Tonomura, O., Fujisaki, Y., Kitai, N., Takemura, R., Osada, K., Hanzawa, S., Moriya, H., Iwasaki, T., Kawahara, T., Terao, M., Matsuoka, M., Moniwa, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2006
Subjects
Amorphous materials
Crystallization
Current measurement
Electrical resistance measurement
MOSFET circuits
Phase change materials
Phase change memory
Phase measurement
Sputtering
Voltage
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Summary:This paper presents a measurement method for 1 transistor-1 resistance (1T1R), phase-change memory (PCM) devices. We fabricated a novel PCM test structure with an internal voltage measurement point, and we monitored the voltage drop between 1T and 1R. The voltage drop was accurately converted to the PCM programming current. This test structure enabled us to measure programming current of less than 100/spl mu/A with a width of 100ns. This method is essential for measuring the low-power operation of PCMs and other nonvolatile memories.
ISBN:1424401674
9781424401673
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2006.1614272