Depth-Resolved Temperature Measurements on Power Devices under Transient Conditions

This paper shows a temperature optical probing technique based on transmission Fabry-Perot interferometry. Their feasibility is demonstrated with a specifically designed thermal test chip device and by also using another well-known thermometry method. Finally, the temperature within the drift region...

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Bibliographic Details
Published inProceedings of the 19th International Symposium on Power Semiconductor Devices and IC's pp. 33 - 36
Main Authors Perpina, X., Jorda, X., Vellvehi, M., Mermet-Guyennet, M., Millan, J., Mestres, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
Fabry-Perot
Optical films
Optical interferometry
Optical reflection
Power electronics
Power measurement
Power semiconductor devices
Refractive index
Solids
Temperature measurement
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Summary:This paper shows a temperature optical probing technique based on transmission Fabry-Perot interferometry. Their feasibility is demonstrated with a specifically designed thermal test chip device and by also using another well-known thermometry method. Finally, the temperature within the drift region of a PT-IGBT is directly measured during its on- and off-state.
ISBN:1424410959
9781424410958
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2007.4294925