Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

• Published in: 2008 IEEE International Reliability Physics Symposium pp. 733 - 734
• Main Authors: Liu, Z.Y., Daming Huang, Liu, W.J., Liao, C.C., Zhang, L.F., Gan, Z.H., Waisum Wong, Ming-Fu Li
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.04.2008
• Subjects: Charge measurement; CMOSFETs; Current measurement; Degradation; Measurement techniques; Phase measurement; Plasma measurements; Pulse measurements; Stress measurement; Tunneling

In this work, we combine our recently developed recovery free on-the-fly interface traps measurement (OFIT) and fast-pulsed-measurement (FPM) to conduct a comprehensive study of BTI degradations for both n- and p-MOSFETs with SiON gate dielectric. The results provide the most reliable data for the u...