Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

In this work, we combine our recently developed recovery free on-the-fly interface traps measurement (OFIT) and fast-pulsed-measurement (FPM) to conduct a comprehensive study of BTI degradations for both n- and p-MOSFETs with SiON gate dielectric. The results provide the most reliable data for the u...

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Bibliographic Details
Published in2008 IEEE International Reliability Physics Symposium pp. 733 - 734
Main Authors Liu, Z.Y., Daming Huang, Liu, W.J., Liao, C.C., Zhang, L.F., Gan, Z.H., Waisum Wong, Ming-Fu Li
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2008
Subjects
Charge measurement
CMOSFETs
Current measurement
Degradation
Measurement techniques
Phase measurement
Plasma measurements
Pulse measurements
Stress measurement
Tunneling
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Summary:In this work, we combine our recently developed recovery free on-the-fly interface traps measurement (OFIT) and fast-pulsed-measurement (FPM) to conduct a comprehensive study of BTI degradations for both n- and p-MOSFETs with SiON gate dielectric. The results provide the most reliable data for the understanding and modeling of BTI degradation and also provide new insights to re-access the impact of BTI in logic and analog circuits and SRAM applications.
ISBN:1424420490
9781424420490
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2008.4559012