A GaN pulse width modulation integrated circuit

We report the first GaN-based pulse width modulation (PWM) circuit for integrated GaN gate driver. This circuit is composed of a sawtooth generator and a comparator, both of which exhibit stable operation at temperatures up to 250 °C and operate properly at 1 MHz. The PWM circuit is able to generate...

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Bibliographic Details
Published in2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 430 - 433
Main Authors Wang, Hanxing, Ho, Alex Man Kwan, Jiang, Qimeng, Chen, Kevin J
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Capacitors
Gallium nitride
Generators
HEMTs
MODFETs
Pulse width modulation
Temperature measurement
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Summary:We report the first GaN-based pulse width modulation (PWM) circuit for integrated GaN gate driver. This circuit is composed of a sawtooth generator and a comparator, both of which exhibit stable operation at temperatures up to 250 °C and operate properly at 1 MHz. The PWM circuit is able to generate PWM signals whose duty cycle is effectively modulated over a wide range by a reference voltage. This successful demonstration suggests the possibility of an all-GaN solution for power converters by monolithically integrating GaN power switches with the peripheral gate drive circuits, leading to a compact solution with reduced parasitics and improved reliability.
ISBN:9781479929177
1479929174
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2014.6856068