Structure design of Nitride double-step intersubband photodetectors for efficient carrier extraction

The structure parameters of III-nitride double-step intersubband photodetectors are theoretically analyzed to ensure efficient extraction of photo-excited electrons. The results indicate that the polarization field in barrier layer behaves sensitive to the thickness of well and step barrier layers....

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Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 111 - 112
Main Authors Kang, Jianbin, Li, Qian, Li, Mo, Wang, Wangping, Chen, Feiliang, Zhang, Jian
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
double-step
Electric fields
Electric potential
Gallium nitride
intersubband
Performance evaluation
Photodetectors
polarization field
Tunneling
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Summary:The structure parameters of III-nitride double-step intersubband photodetectors are theoretically analyzed to ensure efficient extraction of photo-excited electrons. The results indicate that the polarization field in barrier layer behaves sensitive to the thickness of well and step barrier layers. In addition, reducing the Al mole composition of step barrier or properly increasing its thickness will be helpful to enhance the photo-excited electrons tunneling. This knowledge is beneficial to the design of III-nitride terahertz intersubband photodetectors with high efficiency.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570262