Light illumination effects on floating gate memory with Ge nanocrystals in HfO2

The influence of light illumination on the programming of a capacitor floating gate memory based on Ge nanocrystals in HfO 2 was studied. The capacitor was fabricated on a c-Si substrate by magnetron sputtering deposition of a layer sequence of HfO 2 /Ge-HfO 2 /HfO 2 and post-growth rapid thermal an...

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Bibliographic Details
Published in2017 International Semiconductor Conference (CAS) pp. 87 - 90
Main Authors Palade, C., Slav, A., Lepadatu, A. M., Lazanu, S., Ciurea, M. L., Stoica, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2017
Subjects
C-V measurements
Capacitance-voltage characteristics
capacitor
floating gate memory
Ge nanocrystals
Hafnium compounds
light exposure
Lighting
Nonvolatile memory
Programming
Silicon
Writing
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Summary:The influence of light illumination on the programming of a capacitor floating gate memory based on Ge nanocrystals in HfO 2 was studied. The capacitor was fabricated on a c-Si substrate by magnetron sputtering deposition of a layer sequence of HfO 2 /Ge-HfO 2 /HfO 2 and post-growth rapid thermal annealing for nanocrystals formation at 600 o C. The illumination of the structure was performed through a semi-transparent Au contact (20% transparency). A maximum value of the light-induced change of 90% in C-V curve was obtained for 5 mW/cm 2 illumination during +5 V writing programming. The effect of the light exposure on the relative change of the C-V curve can be increased by reducing the writing time at 1 min.
DOI:10.1109/SMICND.2017.8101163