Matched test structures for accurate characterization in millimeter wave range

This paper, presents a novel methodology for small signal equivalent circuit extraction suitable for high frequency characterization up to mm-wave range. This methodology allows the de-embedding and the extraction of RF characteristics by the use of a smart matching at 50Ω of the transistor connecte...

Full description

Saved in:
Bibliographic Details
Published in2014 International Conference on Microelectronic Test Structures (ICMTS) pp. 146 - 149
Main Authors Hamani, Rachid, Andrei, Cristian, Jarry, Bernard, Lintignat, Julien
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2014
Subjects
Equivalent circuits
Frequency measurement
Integrated circuit interconnections
mm-wave band
MOSFET
Probes
Resonant frequency
RF test structures
S-parameters
Small signal equivalent circuit
Online AccessGet full text

Cover

More Information
Summary:This paper, presents a novel methodology for small signal equivalent circuit extraction suitable for high frequency characterization up to mm-wave range. This methodology allows the de-embedding and the extraction of RF characteristics by the use of a smart matching at 50Ω of the transistor connected in GSG probe pads. The method has been validated first on a test module based on RFMOS transistor fabricated in BiCMOS 0.25μm technology from NXP Semiconductors. The results of matched RFMOS transistors at 30.5GHz are presented here and show good agreement between measurements/extractions and calculations (e.g. for C gs ). Second, a bipolar transistor matched test structure is investigated. An improvement of transmission gain of matched test structured from -12dB to -0.2dB has been found using measurements and simulated data.
ISBN:1479921939
9781479921935
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2014.6841483