High aspect ratio TSV copper filling with different seed layers

The paper addresses the through silicon via (TSV) filling using electrochemical deposition (ECD) of copper. The impact of seed layer nature on filling ratio and void formation will be discussed with respect to via diameter and via depth. Based on the spherolyte Cu200 the electrolyte for the copper e...

Full description

Saved in:
Bibliographic Details
Published in2008 58th Electronic Components and Technology Conference pp. 563 - 570
Main Authors Wolf, M.J., Dretschkow, T., Wunderle, B., Jurgensen, N., Engelmann, G., Ehrmann, O., Uhlig, A., Michel, B., Reichl, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
Copper
Etching
Filling
Passivation
Polymer films
Resists
Silicon
Sputtering
Substrates
Through-silicon vias
Online AccessGet full text

Cover

More Information
Summary:The paper addresses the through silicon via (TSV) filling using electrochemical deposition (ECD) of copper. The impact of seed layer nature on filling ratio and void formation will be discussed with respect to via diameter and via depth. Based on the spherolyte Cu200 the electrolyte for the copper electrochemical deposition was modified for good filling behavior. Thermomechanical modeling and simulation was performed for reliability assessment.
ISBN:9781424422302
1424422302
ISSN:0569-5503
2377-5726
DOI:10.1109/ECTC.2008.4550029