Approximations to field-effect factor and their use in GIDL modeling
New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the me...
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Published in | 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 1 - 4 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.07.2011
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Abstract | New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the measurement data in order to prove the validity of the above mentioned approximations. This work can be useful for GIDL analysis in transistor design. |
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AbstractList | New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the measurement data in order to prove the validity of the above mentioned approximations. This work can be useful for GIDL analysis in transistor design. |
Author | Byoungchan Oh Hyungcheol Shin Kozhukhov, Nikita |
Author_xml | – sequence: 1 givenname: Nikita surname: Kozhukhov fullname: Kozhukhov, Nikita email: mkozhukhov@gmail.com organization: Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea – sequence: 2 surname: Byoungchan Oh fullname: Byoungchan Oh organization: Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea – sequence: 3 surname: Hyungcheol Shin fullname: Hyungcheol Shin organization: Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea |
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Snippet | New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL... |
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SubjectTerms | Approximation methods Current measurement Electric fields Electric potential MOSFET circuits Semiconductor device measurement Temperature measurement |
Title | Approximations to field-effect factor and their use in GIDL modeling |
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