Approximations to field-effect factor and their use in GIDL modeling
New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the me...
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Published in | 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 1 - 4 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.07.2011
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Subjects | |
Online Access | Get full text |
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Summary: | New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the measurement data in order to prove the validity of the above mentioned approximations. This work can be useful for GIDL analysis in transistor design. |
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ISBN: | 9781457701597 1457701596 |
ISSN: | 1946-1542 1946-1550 |
DOI: | 10.1109/IPFA.2011.5992740 |