Approximations to field-effect factor and their use in GIDL modeling

New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the me...

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Published in18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) pp. 1 - 4
Main Authors Kozhukhov, Nikita, Byoungchan Oh, Hyungcheol Shin
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2011
Subjects
Approximation methods
Current measurement
Electric fields
Electric potential
MOSFET circuits
Semiconductor device measurement
Temperature measurement
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Summary:New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the measurement data in order to prove the validity of the above mentioned approximations. This work can be useful for GIDL analysis in transistor design.
ISBN:9781457701597
1457701596
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2011.5992740