A Zinc Oxide modified Porous Silicon humidity sensor

In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450 degC. By this technique, it is...

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Bibliographic Details
Published in2006 IEEE International Conference on Information Acquisition pp. 1158 - 1162
Main Authors Tao Jiang, Xiaofeng Zhou, Jian Zhang, Yanling Shi, Tianxing Luo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2006
Subjects
Annealing
Conductivity measurement
Delay
Electric variables measurement
Etching
Humidity measurement
humidity sensor
modified Porous Silicon
Semiconductor films
Silicon
sol-gel
Substrates
Zinc oxide
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Summary:In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450 degC. By this technique, it is possible to obtain a uniform zinc oxide film on the porous silicon substrates. The electrical conductivities of the porous silicon and zinc oxide/porous silicon structures under different humidity levels were measured. It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity
ISBN:9781424405282
1424405289
DOI:10.1109/ICIA.2006.305909