Dual channel current-source gate drivers for high-frequency dc-dc converters

In this paper, resonant gate driver techniques for power MOSFETs are reviewed at first. To solve the exiting problems of the drive circuits previously proposed, new dual channel current-source gate drivers are presented here. The new drive circuits can achieve quick turn-on and turn-off transition t...

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Bibliographic Details
Published in2008 3rd IEEE Conference on Industrial Electronics and Applications pp. 613 - 618
Main Authors Yan-Fei Liu, Lusheng Ge, Shicheng Zheng
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2008
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Summary:In this paper, resonant gate driver techniques for power MOSFETs are reviewed at first. To solve the exiting problems of the drive circuits previously proposed, new dual channel current-source gate drivers are presented here. The new drive circuits can achieve quick turn-on and turn-off transition time to reduce the switching loss of power MOSFETs significantly by constant gate drive currents due to the parasitic inductance, especially the common source inductance. A 12 V synchronous buck VR prototype at 1 MHz switching frequency was built to demonstrate the advantages of the new drive circuits. A significant efficiency improvement over the conventional gate voltage driver is achieved.
ISBN:9781424417179
1424417171
ISSN:2156-2318
2158-2297
DOI:10.1109/ICIEA.2008.4582588