Complex permittivity measurements of dielectrics and semiconductors at millimeter waves with high power sources

We present complex dielectric permittivity measurements of various semiconductor and dielectric materials, including highly absorbing substances, in Q-, V- and W-band frequencies. The measurements have been done using broadband quasioptical millimeter wave system with a backward-wave oscillator as a...

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Bibliographic Details
Published inIEEE MTT-S International Microwave Symposium Digest, 2005 pp. 2079 - 2082
Main Authors Afsar, M.N., Korolev, K.A., Subramanian, L., Tkachov, I.I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Bridges
Dielectric materials
Dielectric measurements
Extraterrestrial measurements
Frequency
Millimeter wave measurements
Millimeter wave technology
Oscillators
Permittivity measurement
Power measurement
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Summary:We present complex dielectric permittivity measurements of various semiconductor and dielectric materials, including highly absorbing substances, in Q-, V- and W-band frequencies. The measurements have been done using broadband quasioptical millimeter wave system with a backward-wave oscillator as a high power source of radiation. Frequency dependencies of real and imaginary parts of dielectric permittivity are calculated from the transmittance spectra. Complex dielectric permittivity data, obtained using both waveguide bridge technique and free space measurements have been compared with previously published results.
ISBN:9780780388451
0780388453
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2005.1517156