Numerical estimation of lattice strain, bending and generation of misfit dislocations in HgCdTe heterostructures grown on GaAs substrate

We determined the spatial distribution of lattice strains in the HgCdTe heterostructures grown on GaAs substrate by using our own simulation program. The obtained lattice stresses are greatly relaxed by the misfit dislocations arising in the interfaces. We calculated the minimum elastic energy as a...

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Published in2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 41 - 42
Main Authors Jozwikowska, A., Markowska, O., Jozwikowski, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.07.2019
Subjects
Cadmium compounds
Gallium arsenide
Graphical models
II-VI semiconductor materials
Lattices
Strain
Substrates
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Summary:We determined the spatial distribution of lattice strains in the HgCdTe heterostructures grown on GaAs substrate by using our own simulation program. The obtained lattice stresses are greatly relaxed by the misfit dislocations arising in the interfaces. We calculated the minimum elastic energy as a function of the dislocation density in all interfaces. We also estimated the part of dislocation's electrical energy in the total energy balance.
ISBN:1728116465
9781728116464
ISSN:2158-3234
DOI:10.1109/NUSOD.2019.8806907