A 5Gb/s low-power PCI express/USB3.0 ready PHY in 40nm CMOS technology with high-jitter immunity
A PCI Express 2.0/1.0 compatible SERDES system had been fabricated in TSMC 40 nm CMOS technology. With the implementation of one lane transceiver, PLL, and PCS, the experimental results have shown this test chip passes PCI Express 2.0/1.0 TX compliance test and RX compliance test. It also achieves r...
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Published in | 2009 IEEE Asian Solid-State Circuits Conference pp. 177 - 180 |
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Main Authors | , , , , , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.11.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A PCI Express 2.0/1.0 compatible SERDES system had been fabricated in TSMC 40 nm CMOS technology. With the implementation of one lane transceiver, PLL, and PCS, the experimental results have shown this test chip passes PCI Express 2.0/1.0 TX compliance test and RX compliance test. It also achieves receiver jitter tolerance up to 0.33UI at BER of 10 -12 with stressing all spec. specified jitter sources. A compact area of 510 um * 710 um for one lane has been achieved while consuming only 125 mW from 0.9 V supply. |
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ISBN: | 1424444330 9781424444335 |
DOI: | 10.1109/ASSCC.2009.5357154 |