Fast atomic diffusion in amorphous films induced by laser pulse annealing

Fast atomic diffusion was evidenced in the surface layer of amorphous thin films of oxides and semiconductors irradiated with low fluence UV pulse laser. This process takes place in a surface layer with a thickness related to the laser radiation absorption depth in the target material and was reveal...

Full description

Saved in:
Bibliographic Details
Published inCAS 2016 proceedings : 2016 International Semiconductor Conference : 39th edition, October 10-12, Sinaia, Romania pp. 155 - 158
Main Authors Teodorescu, V. S., Ghica, C., Maraloiu, A. V., Kuncser, A., Lepadatu, A. M., Stavarache, I., Ciurea, M. L., Scarisoreanu, N. D., Andrei, A., Dinescu, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2016
Subjects
Atom lasers
Atomic beams
cross section electron microscopy
diffusion
laser irradiation
Radiation effects
Surface emitting lasers
Surface morphology
thin amorphous films
Online AccessGet full text
DOI10.1109/SMICND.2016.7783070

Cover

More Information
Summary:Fast atomic diffusion was evidenced in the surface layer of amorphous thin films of oxides and semiconductors irradiated with low fluence UV pulse laser. This process takes place in a surface layer with a thickness related to the laser radiation absorption depth in the target material and was revealed by the cross section transmission electron microscopy studies. These high values of diffusivity can be explained by supposing the glass transition transformation in the amorphous structure, triggered by the action of the laser pulse field. This effect can have application for controlling structural modifications at nanoscale of the thin films surface and also for inducing structural modification of interfaces between the film and substrate.
DOI:10.1109/SMICND.2016.7783070