Facile Synthesis of N-doped ZnO Nanorod Arrays: Towards Enhancing the UV-sensing Performance

Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displaye...

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Bibliographic Details
Published in2018 IEEE International Conference on Semiconductor Electronics (ICSE) pp. 77 - 80
Main Authors Ismail, A.S., Mamat, M.H., Malek, M.F., Azhar, N.E.A., Sulimai, N.H., Rani, R. Abdul, Zoolfakar, A.S., Rusop, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2018
Subjects
Doping
II-VI semiconductor materials
immersion
nanorod
Nitrogen
Optical sensors
Resistance
Sensitivity
Zinc oxide
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Summary:Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displayed that 1 at. % sample possessed the lowest resistance film and exhibit the highest UV sensing performance with sensitivity of 12.9.
DOI:10.1109/SMELEC.2018.8481321