Manufacturability comparison of thin oxynitride films

Thin film nitridation has many applications in sub-0.13-micron line width semiconductor processing. We evaluated several single-wafer processing options capable of creating oxynitride films. Analytical results were obtained using ellipsometry, X-ray photoelectron spectroscopy (XPS), and TOFSIMS. The...

Full description

Saved in:
Bibliographic Details
Published in2005 13th International Conference on Advanced Thermal Processing of Semiconductors p. 5 pp.
Main Authors Preuss, H., Nakos, J., Adams, E., Burnham, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Condition monitoring
Manufacturing processes
Nitrogen
Performance analysis
Plasma materials processing
Plasma x-ray sources
Semiconductor device manufacture
Semiconductor films
Spectroscopy
Temperature
Online AccessGet full text

Cover

More Information
Summary:Thin film nitridation has many applications in sub-0.13-micron line width semiconductor processing. We evaluated several single-wafer processing options capable of creating oxynitride films. Analytical results were obtained using ellipsometry, X-ray photoelectron spectroscopy (XPS), and TOFSIMS. These control methods are also compared to electrical performance data. Data are also reviewed with respect to manufacturing requirements such as tool-to-tool matching and process capability; including chamber to chamber, wafer to wafer and within wafer variability
ISBN:078039223X
9780780392236
ISSN:1944-0251
1944-026X
DOI:10.1109/RTP.2005.1613694