Die attach delamination study of electronic stability control device used in harsh automotive environment

• Published in: 2017 12th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) pp. 160 - 163
• Main Author: Cheong Chiang Ng
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2017
• Subjects: Delamination; Heating systems; Integrated circuit modeling; Mathematical model; Performance evaluation; Solid modeling; Transient analysis
• ISSN: 2150-5942
• DOI: 10.1109/IMPACT.2017.8255894

Power semiconductor modules are subject to repetitive power and thermal stresses in normal operation. Over time, these stresses can create cracks and delamination that accumulate in the die attach (DA) layer. With increasing number of power cycles, these flaws can grow larger. This increases the thermal impedance and can result in greater temperature fluctuations within the semiconductor module. This excess heat accelerates damage to the entire device. This DA delamination thermal modeling was performed to identify a critical delamination level that would cause a significant reduction in thermal performance. Transient thermal analysis was performed on different levels of DA delamination. There are a large number of active heat sources on the electronic stability control die used in harsh automotive environment so it is difficult to create each heat source manually in the finite element model. Model order reduction technique was applied to develop rapid behavioral model for this transient electro-thermal simulation. The thermal performance was simulated at a system level in time domain. An acceptable level of delamination while still delivering excellent field thermal performance was defined.