Development toward high-power sub-1-ohm DC-67 GHz RF switches using phase change materials for reconfigurable RF front-end

• Published in: 2014 IEEE MTT-S International Microwave Symposium (IMS2014) pp. 1 - 3
• Main Authors: Jeong-sun Moon, Hwa-chang Seo, Duc Le
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2014
• Subjects: Indexes; insertion loss; linearity; Loss measurement; Metals; Micromechanical devices; Phase change materials; phase-change material; Radio frequency; RF switches; Switches; tunable filters; wireless communications
• DOI: 10.1109/MWSYM.2014.6848334
• ISSN: 0149-645X

We report GeTe-based phase change material RF switches with on-state resistance of 0.07 ohm*mm and off-state capacitance of 20 fF/mm. The RF switch figure-of-merit, R on *C off is comparable to RF MEMS ohmic switches. The PCM RF shunt and series switches were fabricated for the first time in a lateral FET configuration to reduce parasitics, different from the vertical via switches. In a shunt switch configuration, isolation of 30 dB was achieved up to 67 GHz with return loss of 15 dB. RF power handling was tested with ~10 W for series and 3 W for shunt configurations. Harmonic powers were suppressed more than 100 dBc at fundamental power of 1 W, for future tunable and reconfigurable RF technology.